Enhanced non-classical electrostriction in strained tetragonal ceria.

ABSTRACT: Electrostriction is the upsurge of strain under an electric field in any dielectric material. Oxygen-defective metal oxides, such as acceptor-doped ceria, exhibit high electrostriction 10^-17 m²V^-2 values, which can be further enhanced via interface engineering at the nanoscale. This effect in ceria is "non-classical" as it arises from an intricate relation between defect-induced polarisation and local elastic distortion in the lattice. Here, we investigate the impact of mismatch strain when epitaxial Gd-doped CeO₂ thin films are grown on various single-crystal substrates. We demonstrate that varying the compressive and tensile strain can fine-tune the electromechanical response. The electrostriction coefficients achieve a large M₁₁ ≈ 3

SUBMITTER: Santucci S 

PROVIDER: S-EPMC11697435 | biostudies-literature | 2025 Jan

REPOSITORIES: biostudies-literature