Microelectronic Structure and Doping Nonuniformity of Phosphorus-Doped CdSeTe Solar Cells.

ABSTRACT: Optimizing group-V doping and Se alloying are two main focuses for advancing CdTe photovoltaic technology. We report on nanometer-scale characterizations of microelectronic structures of phosphorus (P)-doped CdSeTe devices using a combination of two atomic force microscopy-based techniques, namely, Kelvin probe force microscopy (KPFM) and scanning spreading resistance microscopy (SSRM). KPFM on device cross-section images distribution of the potential drop across the device. SSRM taken on a delaminated front interface and further beveling into absorber bulk reveals local distributions of doping polarity and carrier concentration. The KPFM and SSRM imaging corroborate each other, suggesting that nonuniform doping revealed by SSRM is associated with nonuniform potential features observed by

SUBMITTER: Jiang CS 

PROVIDER: S-EPMC11744667 | biostudies-literature | 2025 Jan

REPOSITORIES: biostudies-literature