Controllable synthesis of nonlayered high-κ Mn₃O₄ single-crystal thin films for 2D electronics.

ABSTRACT: Two-dimensional (2D) materials have been identified as promising candidates for future electronic devices. However, high dielectric constant (κ) materials, which can be integrated with 2D semiconductors, are still rare. Here, we report a hydrate-assisted thinning chemical vapor deposition (CVD) technique to grow manganese oxide (Mn₃O₄) single crystal nanosheets, enabled by a strategy to minimize the substrate lattice mismatch and control the growth kinetics. The material demonstrated a dielectric constant up to 135, an equivalent oxide thickness (EOT) as low as 0.8 nm, and a breakdown field strength (E_bd) exceeding 10 MV/cm. MoS₂ field-effect transistors (FETs) integrated with Mn₃O₄ thin films through mechanical stacking met

SUBMITTER: Yuan J 

PROVIDER: S-EPMC11754841 | biostudies-literature | 2025 Jan

REPOSITORIES: biostudies-literature