High-Temperature Optoelectronic Transport Behavior of n-TiO₂ Nanoball-Stick/p-Lightly Boron-Doped Diamond Heterojunction.

ABSTRACT: The n-TiO₂ nanoballs-sticks (TiO₂ NBSs) were successfully deposited on p-lightly boron-doped diamond (LBDD) substrates by the hydrothermal method. The temperature-dependent optoelectronic properties and carrier transport behavior of the n-TiO₂ NBS/p-LBDD heterojunction were investigated. The photoluminescence (PL) of the heterojunction detected four distinct emission peaks at 402 nm, 410 nm, 429 nm, and 456 nm that have the potential to be applied in white-green light-emitting devices. The results of the I-V characteristic of the heterojunction exhibited excellent rectification characteristics and good thermal stability at all temperatures (RT-200 °C). The forward bias current increases gradually with the increase in external temperature. The tempera

SUBMITTER: Ge S 

PROVIDER: S-EPMC11766722 | biostudies-literature | 2025 Jan

REPOSITORIES: biostudies-literature