X-Ray Performance of SiC NPN Radiation Detector.

ABSTRACT: In this paper, a silicon carbide (SiC) phototransistor based on an open-base structure was fabricated and used as a radiation detector. In contrast to the exposed and thin sensitive region of traditional photo detectors, the sensitive region of the radiation detector was much thicker (30 μm), ensuring the high energy deposition of radiation particles. The response properties of the fabricated SiC npn radiation detector were characterized by high-energy X-ray illumination with a maximum X-ray photon energy of 30 keV. The SiC npn detector featured stable and clear response to the X-ray within 0.0766 Gy∙s^-1 to 0.766 Gy∙s^-1 below 300 V. Due to to the low leakage current of less than 1 nA and the fully depleted sensitive region, the bipolar-transistor-modeled SiC npn detec

SUBMITTER: Wang J 

PROVIDER: S-EPMC11767698 | biostudies-literature | 2024 Dec

REPOSITORIES: biostudies-literature