Effects of the Interface Properties on the Performance of UV-C Photoresistors: Gallium Oxide as Case Study.

ABSTRACT: Electrical contacts are of the greatest importance as they decisively contribute to the overall performance of photoresistors. Undoped κ-Ga₂O₃ is an ideal material for photoresistors with high performance in the UV-C spectral region thanks to its intrinsic solar blindness and extremely low dark current. The quality assessment of the contact/κ-Ga₂O₃ interface is therefore of paramount importance. The transfer length method is not applicable to undoped Ga₂O₃ because the interface with several metals shows a non-ohmic character, and a non-equivalent contact resistance could restrict its applicability. In this work, a new methodological procedure to evaluate the quality of contact interface and its effect on the sensing performa

SUBMITTER: Pavesi M 

PROVIDER: S-EPMC11769345 | biostudies-literature | 2025 Jan

REPOSITORIES: biostudies-literature