Quantification of Interfacial Charges in Multilayered Nanocapacitors by Operando Electron Holography.

ABSTRACT: Interfaces in heterostructures play a major role in the functionality of electronic devices. Phenomena such as charge trapping/detrapping at interfaces under electric field affect the dynamics of metal/oxide/metal capacitors and metal/oxide/semiconductor transistors used for memory and logic applications. Charge traps are also key for the stabilization of a ferroelectric polarization and its ability to switch in ferroelectric devices such as ferroelectric tunnel junctions (FTJs). However, electric-field induced charging phenomena remain unclear even in conventional dielectric heterostructures due to a lack of direct measurement methods. Here, it is shown how operando off-axis electron holography can be used to quantify the charges trapped at the dielectric/dielectric interfaces as well as

SUBMITTER: Zhang L 

PROVIDER: S-EPMC11775874 | biostudies-literature | 2025 Jan

REPOSITORIES: biostudies-literature