Electrically Switching Ferroelectric Order in 3R-MoS₂ Layers.

ABSTRACT: Transition metal dichalcogenides (TMDs) with rhombohedral (3R) stacking order are excellent platforms to realize multiferroelectricity. In this work, we demonstrate the electrical switching of ferroelectric orders in bilayer, trilayer, and tetralayer 3R-MoS₂ dual-gate devices by examining their reflection and photoluminescence (PL) responses under sweeping out-of-plane electric fields. We observe sharp shifts in excitonic spectra at different critical fields with pronounced hysteresis. These phenomena are attributed to distinct interlayer polarizations resulting from specific lateral displacements between the layers, with each configuration yielding a unique ferroelectric state. Our findings indicate two, three, and four ferroelectric regimes for bilayer, trilayer, and tetralaye

SUBMITTER: Ouyang T 

PROVIDER: S-EPMC11783594 | biostudies-literature | 2025 Jan

REPOSITORIES: biostudies-literature