Epitaxial Cu₂O Thin Films Deposited from Solution: the Enabling Role of Cu Diffusion into the GaAs Substrate.

ABSTRACT: Cuprous oxide (Cu₂O) thin films were chemically deposited from a solution onto GaAs(100) and (111) substrates using a simple three-component solution at near-ambient temperatures (10-60 °C). Interestingly, a similar deposition onto various other substrates including Si(100), Si(111), glass, fluorine-doped tin oxide, InP, and quartz resulted in no film formation. Films deposited on both GaAs(100) and (111) were found alongside substantial etching of the substrates. The etching of GaAs(100) was uneven, resulting in pyramid-like vacancies, while for GaAs(111), the etching was more even and resulted in a flat interface. X-ray diffraction measurements indicated highly preferential (110) growth of Cu₂O regardless of GaAs substrate orientation, while TEM and a selected area

SUBMITTER: Gefen S 

PROVIDER: S-EPMC11788980 | biostudies-literature | 2025 Jan

REPOSITORIES: biostudies-literature