Photoemission Study of GaN Passivation Layers and Band Alignment at GaInP(100) Heterointerfaces.

ABSTRACT: To date, III-V semiconductor-based tandem devices with GaInP top photoabsorbers show the highest solar-to-electricity or solar-to-fuel conversion efficiencies. In photoelectrochemical (PEC) cells, however, III-V semiconductors are sensitive, in terms of photochemical stability and, therefore, require suitable functional layers for electronic and chemical passivation. GaN films are discussed as promising options for this purpose. The band alignment between such a protection layer and the III-V semiconductor should be aligned to minimize corrosion and nonradiative interfacial recombination and to promote selective charge carrier transport. Here, we investigate the band alignment between GaN passivation layers and n-type doped GaInP(100) photoabsorbers and grew n-type GaInP(100) epitaxially b

SUBMITTER: Shekarabi S 

PROVIDER: S-EPMC11788992 | biostudies-literature | 2025 Jan

REPOSITORIES: biostudies-literature