Crystal structure modulating performances for 213-nm GeO₂ solar-blind photodetectors via DC reactive magnetron sputtering method.

ABSTRACT: Owing to the ultra-wide bandgap energy, high thermal conductivity, and ambipolar capability, GeO₂ films are receiving great attention for potential applications in power devices and solar-blind photodetectors. However, the precise control of the crystal structure and optical property is a huge challenge due to close free formation energies of multiple phases, inhibiting the GeO₂ based practical device applications. Here, we have fabricated quartz and rutile-GeO₂ thin films utilizing the magnetron sputtering based synthetic strategy, which exhibit ultra-wide bandgap energies of 5.51 and 5.88 eV. On the foundation of these ultra-wide bandgap semiconductors, obvious photoresponse characteristics have been achieved at 213 nm and the quartz-GeO₂ devic

SUBMITTER: Wei C 

PROVIDER: S-EPMC11790881 | biostudies-literature | 2025 Feb

REPOSITORIES: biostudies-literature