Critical band-to-band-tunnelling based optoelectronic memory.

ABSTRACT: Neuromorphic vision hardware, embedded with multiple functions, has recently emerged as a potent platform for machine vision. To realize memory in sensor functions, reconfigurable and non-volatile manipulation of photocarriers is highly desirable. However, previous technologies bear mechanism challenges, such as the ambiguous optoelectronic memory mechanism and high potential barrier, resulting in a limited response speed and a high operating voltage. Here, for the first time, we propose a critical band-to-band tunnelling (BTBT) based device that combines sensing, integration and memory functions. The nearly infinitesimal barrier facilitates the tunnelling process, resulting in a broadband application range (940 nm). Furthermore, the observation of dual negative differential resistance (ND

SUBMITTER: Xu H 

PROVIDER: S-EPMC11802729 | biostudies-literature | 2025 Feb

REPOSITORIES: biostudies-literature