Oxygen Incorporation as a Route to Nondegenerate Zinc Nitride Semiconductor Thin Films.

ABSTRACT: Zinc nitride (Zn₃N₂) comprises earth-abundant elements, possesses a small direct bandgap, and is characterized by high electron mobility. While these characteristics make the material a promising compound semiconductor for various optoelectronic applications, including photovoltaics and thin-film transistors, it commonly exhibits unintentional degenerate n-type conductivity. This degenerate character has significantly impeded the development of Zn₃N₂ for technological applications and is commonly assumed to arise from incorporation of oxygen impurities. However, consistent understanding and control of the role of native and impurity defects on the optoelectronic properties of this otherwise promising semiconductor have not yet emerged. Here, we s

SUBMITTER: Sirotti E 

PROVIDER: S-EPMC11803553 | biostudies-literature | 2025 Feb

REPOSITORIES: biostudies-literature