Ultranarrow Semiconductor WS₂ Nanoribbon Field-Effect Transistors.

ABSTRACT: Semiconducting transition metal dichalcogenides (TMDs) have attracted significant attention for their potential to develop high-performance, energy-efficient, and nanoscale electronic devices. Despite notable advancements in scaling down the gate and channel length of TMD field-effect transistors (FETs), the fabrication of sub-30 nm narrow channels and devices with atomic-scale edge control still poses challenges. Here, we demonstrate a crystallography-controlled nanostructuring technique to fabricate ultranarrow tungsten disulfide (WS₂) nanoribbons as small as sub-10 nm in width. The WS₂ nanoribbon junctions having different widths display diodic current-voltage characteristics, providing a way to create and tune nanoscale device properties by controlling the size of

SUBMITTER: Hoque MA 

PROVIDER: S-EPMC11803707 | biostudies-literature | 2025 Feb

REPOSITORIES: biostudies-literature