Interfacial Elemental Analysis of Slanted Edge-Contacted Monolayer MoS₂ Transistors via Directionally Angled Etching.

ABSTRACT: Edge contacts offer a significant advantage for enhancing the performance of semiconducting transition metal dichalcogenide (TMDC) devices by interfacing with the metallic contacts on the lateral side, which allows the encapsulation of all of the channel material. However, despite intense research, the fabrication of feasible electrical edge contacts to TMDCs to improve device performance remains a great challenge, as interfacial chemical characterization via conventional methods is lacking. A major bottleneck in explicitly understanding the chemical and electronic properties of the edge contact at the metal-two-dimensional (2D) semiconductor interface is the small cross section when characterizing nominally one-dimensional edge contacts. Here, we demonstrate a directional angled etching t

SUBMITTER: Lin CC 

PROVIDER: S-EPMC11803913 | biostudies-literature | 2025 Feb

REPOSITORIES: biostudies-literature