Ternary Logic Transistors Using Multi-Stacked 2D Electron Gas Channels in Ultrathin Oxide Heterostructures.

ABSTRACT: 2D electron gas field-effect transistors (2DEG-FETs), employing 2DEG formed at an interface of ultrathin (≈6 nm) Al₂O₃/ZnO heterostructure as the active channel, exhibit outstanding drive current (≈215 µA), subthreshold swing (≈132 mV dec^-1), and field effect mobility (≈49.6 cm² V^-1 s^-1) with a high on/off current ratio of ≈10⁷. It is demonstrated that the Al₂O₃ upper layer in Al₂O₃/ZnO heterostructure acts as the source/drain resistance component during transistor operations, and the applied potential to the 2DEG channel is successfully modulated by Al₂O₃ thickness variations so that the threshold voltage (V_th) is effectively tuned. Rema

SUBMITTER: Choi JH 

PROVIDER: S-EPMC11809351 | biostudies-literature | 2025 Feb

REPOSITORIES: biostudies-literature