Cost-Effective, Ester-Based Molecular Doping in Silicon.

ABSTRACT: When fabricating Si-based devices, many process steps require the use of expensive, high-power consumption, environmentally unfriendly, operator-unsafe machines, and processes. Among the many involved process steps, the ones needed to fabricate the metallurgical junction make use of conventional doping methods, which do not always represent optimal solutions. The high costs of the processing equipment and the use of hazardous materials, not to count the structural damage produced, intrinsically limit future developments towards nm-scaled and low cost approaches. Recently a chemistry-based method has been proposed to form the junction on Si, the so-called molecular doping. In this approach, the samples to be doped are subjected to a silylation process, during which a layer of dopant-contain

SUBMITTER: Shrivastava A 

PROVIDER: S-EPMC11818006 | biostudies-literature | 2025 Jan

REPOSITORIES: biostudies-literature