Atomic Pathways of Crystal-to-Crystal Transitions and Electronic Origins of Resistive Switching in MnTe for Ultralow-Power Memory.

ABSTRACT: In conventional phase change memory (PCM) technology, the melting process required to create an amorphous state typically results in extremely high power consumption. Recently, a new type of PCM device based on a melting-free crystal-to-crystal phase transition in MnTe has been developed, offering a potential solution to the problem. However, the electronic and atomic mechanisms underlying this transition remain unclear. In this work, by first-principles calculations, the resistance contrast is attributed to the differences in hole effective mass and vacancy formation energy of the two phases. Moreover, two phase transition pathways of the α-MnTe-to-β-MnTe transition, namely, the 'slide-and-stand-up' transitions, are identified based on coherent atomic movements. The energy barriers for th

SUBMITTER: Wu R 

PROVIDER: S-EPMC11820569 | biostudies-literature | 2025 Jan

REPOSITORIES: biostudies-literature