Characterization and Modeling of Interfacial Photogating Effect in Graphene Field-Effect Transistor Photodetectors on Silicon.

ABSTRACT: Infrared photodetection of silicon is prevented by the bandgap energy at wavelengths longer than approximately 1100 nm (∼1.12 eV) at room temperature, while silicon is the most used in modern electronics. Of particular interest is the performance of silicon for photodetectors in the infrared region beyond the silicon bandgap. Here, we demonstrate graphene field-effect transistor photodetectors on silicon with high photoconductive gain and photodetection capability extending to the infrared region. These devices have a photoresponsivity of >10⁶ A/W for excitation above the silicon bandgap energy and yield a value of 35 A/W for infrared detection at a wavelength of 1530 nm. The high photosensitivity of the devices originates from the photogating effect in the nanostructures and a

SUBMITTER: Howe L 

PROVIDER: S-EPMC11823461 | biostudies-literature | 2025 Feb

REPOSITORIES: biostudies-literature