Temperature Dependence of the Band Gap and Exciton Photoreflectance in Layered Gallium Telluride.

ABSTRACT: Among Group III-A metal monochalcogenides, gallium telluride (GaTe) is one of the less studied materials in terms of applications and optical characterization. For the temperature dependence of the energy transitions in GaTe, photoluminescence (PL) spectroscopy is commonly used, and photomodulated reflectance (PR) is yet to be reported. In this work, layered monoclinic GaTe single crystals were synthesized by the Bridgman technique and used for the investigation of the conduction band (CB) edge and free-exciton (FX) state transitions using PR spectroscopy. Both energy transitions (i.e., absorption and emission) were present at room temperature at 1.656 and 1.647 eV for the CB edge transition (≡E_g) and for the FX state transition, respectively, and show a blueshift at cryo

SUBMITTER: Sta Maria CC 

PROVIDER: S-EPMC11826511 | biostudies-literature | 2025 Feb

REPOSITORIES: biostudies-literature