Impact of precursor dosing on the surface passivation of AZO/AlO _<i>x</i> stacks formed using atomic layer deposition.

ABSTRACT: High-efficiency solar cell architectures, including silicon heterojunction (SHJ) and perovskite/silicon tandems, rely heavily on the unique properties of transparent conducting oxides (TCOs). The push towards terawatt-scale PV manufacturing means it is increasingly desirable to develop indium-free TCOs to facilitate the upscaled manufacturing of high-efficiency cell designs. Aluminium-doped ZnO (AZO) deposited by atomic layer deposition (ALD) has emerged as a promising candidate due to its combination of optical transparency and electrical conductivity. In addition, AZO has also been shown to passivate the c-Si surface. The ability for one material to provide all three properties without requiring any indium is advantageous in single junction and tandem solar devices. Herein, we demonstrat

SUBMITTER: Wang Y 

PROVIDER: S-EPMC11826515 | biostudies-literature | 2025 Apr

REPOSITORIES: biostudies-literature