Nitrogen Dioxide Detection with Ambipolar Silicon Nanowire Transistor Sensors.

ABSTRACT: Si nanowire transistors are ideal for the sensitive detection of atmospheric species due to their enhanced sensitivity to changes in the electrostatic potential at the channel surface. In this study, we present unique ambipolar Si junctionless nanowire transistors (Si-JNTs) that incorporate both n- and p-type conduction within a single device. These transistors enable scalable detection of nitrogen dioxide (NO₂), a critical atmospheric oxidative pollutant, across a broad concentration range, from high levels (25-50 ppm) to low levels (250 ppb-2 ppm). Acting as an electron acceptor, NO₂ generates holes and functions as a pseudodopant for Si-JNTs, altering the conductance and other device parameters. Consequently, ambipolar Si-JNTs exhibit a dual response

SUBMITTER: Vardhan V 

PROVIDER: S-EPMC11826891 | biostudies-literature | 2025 Feb

REPOSITORIES: biostudies-literature