Van der Waals Engineering of One-Transistor-One-Ferroelectric-Memristor Architecture for an Energy-Efficient Neuromorphic Array.

ABSTRACT: Two-dimensional-material-based memristor arrays hold promise for data-centric applications such as artificial intelligence and big data. However, accessing individual memristor cells and effectively controlling sneak current paths remain challenging. Here, we propose a van der Waals engineering approach to create one-transistor-one-memristor (1T1M) cells by assembling the emerging two-dimensional ferroelectric CuCrP₂S₆ with MoS₂ and h-BN. The memory cell exhibits high resistance tunability (10⁶), low sneak current (120 fA), and low static power (12 fW). A neuromorphic array with greatly reduced crosstalk is experimentally demonstrated. The nonvolatile resistance switching is driven by electric-field-induced ferroelectric polarization rever

SUBMITTER: Ma Y 

PROVIDER: S-EPMC11827105 | biostudies-literature | 2025 Feb

REPOSITORIES: biostudies-literature