Towards the quantized anomalous Hall effect in AlO_x-capped MnBi₂Te₄.

ABSTRACT: The quantum anomalous Hall effect in layered antiferromagnet MnBi₂Te₄ harbors a rich interplay between magnetism and topology, holding a significant promise for low-power electronic devices and topological antiferromagnetic spintronics. In recent years, MnBi₂Te₄ has garnered considerable attention as the only known material to exhibit the antiferromagnetic quantum anomalous Hall effect. However, this field faces significant challenges as the quantization at zero magnetic field depending critically on fabricating high-quality devices. In this article, we introduce a straightforward yet effective method to mitigate the detrimental effect of the standard fabrication on MnBi₂Te₄ by depositing an AlO_x layer on the surf

SUBMITTER: Wang Y 

PROVIDER: S-EPMC11836109 | biostudies-literature | 2025 Feb

REPOSITORIES: biostudies-literature