Ultralow-Resistance Contacts to Heavily Doped p-Type Nb_xW_1-xS_y Thin Films Grown by Atomic Layer Deposition.

ABSTRACT: Transition metal dichalcogenides (TMDs) are an important class of materials for future microelectronics. Of particular interest are TMDs deposited by atomic layer deposition (ALD) since this technique allows both back-end-of-line (BEOL) compatible deposition and the ability to create heavily doped regions for contact formation. In this work, we characterize ∼3 nm-thick heavily doped Nb_xW_1-xS_y thin films grown by plasma-enhanced ALD using gated transfer-length measurement (TLM) structures. An analysis of films with different Nb concentrations, x, found that films with x = 0.22 had the lowest sheet resistivity of 86 kΩ/sq along with an ultrahigh carrier concentration of 4.2 × 10²⁰ cm^-3. The contact resi

SUBMITTER: Li R 

PROVIDER: S-EPMC11843536 | biostudies-literature | 2025 Feb

REPOSITORIES: biostudies-literature