Low-temperature pressure-assisted liquid-metal printing for β-Ga₂O₃ thin-film transistors.

ABSTRACT: Developing a low-temperature and cost-effective manufacturing process for energy-efficient and high-performance oxide-thin-film transistors (TFTs) is a crucial step toward advancing next-generation device applications such as wearable and flexible electronics. Among several methods, a liquid-metal printing technique is considered a promising, cost-effective oxide semiconductor process due to its inherent advantages, such as vacuum-free, low-thermal budget, high throughput, and scalability. In this study, we have developed a pressure-assisted liquid-metal printing technique enabling the low-temperature synthesis of polycrystalline wide bandgap n-channel oxide-TFTs. The n-channel oxide TFTs based on ~3 nm-thick β-Ga₂O₃ channels exhibited good TFT switching properties wi

SUBMITTER: Huang CH 

PROVIDER: S-EPMC11846887 | biostudies-literature | 2025 Feb

REPOSITORIES: biostudies-literature