Near-field terahertz time-domain spectroscopy for in-line electrical metrology of semiconductor integration processes for memory.

ABSTRACT: Monitoring electrical properties in semiconductor integration processes is crucial in identifying electrical defects that determine the reliability and performance of metal oxide semiconductor field-effect transistors. A non-destructive in-line metrology technique using terahertz (THz) waves was developed to observe electrical properties between semiconductor integration processes. By combining near-field microprobes with THz time-domain spectroscopy (TDS), sub-10 μm resolution was achieved, enabling the measurement of on-chip micro-patterns. The system was integrated into a memory production line and demonstrated consistent results with conventional destructive methods. The TDS signal correction method effectively suppressed signal variations in unwanted layers. The results of non-invasiv

SUBMITTER: Jun S 

PROVIDER: S-EPMC11846951 | biostudies-literature | 2025 Feb

REPOSITORIES: biostudies-literature