Electronic Impact of High-Energy Metal Deposition on Ultrathin Oxide Semiconductors.

ABSTRACT: High-energy metal deposition significantly impacts the performance and reliability of two-dimensional (2D) semiconductors and nanodevices. This study investigates the localized annealing effect in atomically thin In₂O₃ induced during high-energy metal deposition. The localized heating effect alters the electronic performance of In₂O₃ devices, especially in shorter channel devices, where heat dissipation is further constrained. This effect creates a conductivity gradient along the In₂O₃ device with higher conductivity near the metal contact, as observed by conductive atomic force microscopy (C-AFM). This gradient leads to a pronounced threshold voltage (V_th) shift as the channel length (L_ch

SUBMITTER: Pan YY 

PROVIDER: S-EPMC11849035 | biostudies-literature | 2025 Feb

REPOSITORIES: biostudies-literature