Electrical Properties of Schottky Devices from HfO₂ and ZnO/HfO₂ Thin Films: Morphological, Structural, and Optical Investigations.

ABSTRACT: The structural and electronic properties of thin films are crucial for the performance of heterojunction diodes, which are key components in modern electronic devices. Optimizing these properties through advanced materials and fabrication techniques is an area of significant research, particularly in reducing leakage currents and enhancing device reliability. This study investigates the structural characteristics of a monolayer HfO₂ and a double layer ZnO/HfO₂ interface layer. This research specifically examines the impact of an HfO₂ interface layer on the current transport properties of n-ZnO/p-Si heterojunction diodes, because understanding the current transport mechanisms in ZnO and HfO₂ thin films, especially in relation to reducing de

SUBMITTER: Seckin A 

PROVIDER: S-EPMC11866202 | biostudies-literature | 2025 Feb

REPOSITORIES: biostudies-literature