One step large-scale preparation of silicon-based efficient solar vapor generators.

ABSTRACT: In this work, the fabrication of the material for solar vapor generation using porous silicon treated by electrochemical etching, metal-assisted chemical etching, and electrochemical metal-assisted etching is reported. The proposed method does not require high-cost equipment and permits the production of centimeter-sized samples within minutes. Morphologies of the samples have been studied by scanning electron microscopy and X-ray diffraction spectroscopy, and the distribution of the impurities has been observed by dispersive X-ray analysis. First-principles modeling has been used to simulate the effect of nickel dopants on the electronic structure of the silicon matrix. Measurements of Raman spectra demonstrate a colossal increase in the signal intensity for all samples. The estimated vap

SUBMITTER: Boukhvalov DW 

PROVIDER: S-EPMC11873784 | biostudies-literature | 2025 Feb

REPOSITORIES: biostudies-literature