Electronic threshold switching of As-embedded SiO₂ selectors: charged oxygen vacancy model.

ABSTRACT: Sneak current issues in crossbar arrays of non-volatile memories can be effectively alleviated using threshold switching (TS)-based selectors. However, 1-selector-1-resistor integration requires coherence between the constituent materials and operational parameters of the two components. Here, we propose a highly coherent selector via in-depth investigation of the operation process of a fab-friendly As-SiO₂ selector unit. The structural and electrical characteristics of an As-embedded SiO₂ selector are analyzed, and the TS-on and -off operational mechanism is presented. Further, the critical control elements governing the selector operation are identified, including the electron charging into the oxygen vacancies in the SiO₂ matrix and energy band alignment

SUBMITTER: Kim HR 

PROVIDER: S-EPMC11880476 | biostudies-literature | 2025 Mar

REPOSITORIES: biostudies-literature