Buffer-Less Gallium Nitride High Electron Mobility Heterostructures on Silicon.

ABSTRACT: Thick metamorphic buffers are considered indispensable for III-V semiconductor heteroepitaxy on large lattice and thermal-expansion mismatched silicon substrates. However, III-nitride buffers in conventional GaN-on-Si high electron mobility transistors (HEMT) impose a substantial thermal resistance, deteriorating device efficiency and lifetime by throttling heat extraction. To circumvent this, a systematic methodology for the direct growth of GaN after the AlN nucleation layer on six-inch silicon substrates is demonstrated using metal-organic vapor phase epitaxy (MOVPE). Crucial growth-stress modulation to prevent epilayer cracking is achieved even without buffers, and threading dislocation densities comparable to those in buffered structures are realized. The buffer-less design yields a G

SUBMITTER: Ghosh S 

PROVIDER: S-EPMC11881668 | biostudies-literature | 2025 Mar

REPOSITORIES: biostudies-literature