Tunneling-barrier-controlled sensitive deep ultraviolet photodetectors based on van der Waals heterostructures.

ABSTRACT: Deep ultraviolet (DUV) photodetection usually relies on wide-bandgap semiconductors, which however face challenges in material growth and doping processes. In this work, we proposed and validated a photodetection scheme based on tunneling barrier modulation, achieving highly sensitive DUV photodetection. Using a two-dimensional van der Waals heterostructure, the device integrates MoS₂ as the transporting layer for its high carrier mobility and low dark current, few-layered graphene (FLG) as the photon absorption layer, and hexagonal boron nitride (hBN) as the dielectric barrier. The device exhibits an photoresponsivity of 4.4 × 10⁶A·W^-1 and specific detectivity of 1.4 × 10¹⁷ cm⋅Hz-1/2⋅W-1 for 250 nm DUV light, with a rejection ratio R₂₅₀

SUBMITTER: Li X 

PROVIDER: S-EPMC11882958 | biostudies-literature | 2025 Mar

REPOSITORIES: biostudies-literature