Effect of La and Si additives in Zr-doped HfO₂ capacitors for pseudo-linear high-κ dielectric applications.

ABSTRACT: This study investigates the impact of dopants on Hf_1-xZr_xO₂-based capacitors for high-performance, hysteresis-free dielectric applications. Control of the crystalline structure of Hf_1-xZr_xO₂ films is crucial for achieving superior dielectric properties. The tetragonal (t) phase of Hf_1-xZr_xO₂ exhibits anti-ferroelectric (AFE) characteristics and shows promise due to its high dielectric constant (κ). However, hysteresis behavior in polarization-voltage sweeps due to AFE behavior presents a significant challenge, primarily due to the high energy loss when implemented in dynamic random-access-memory (DRAM) applications. To achieve hysteresis-free operation, this study focuses on suppressing AFE s

SUBMITTER: Lee M 

PROVIDER: S-EPMC11885729 | biostudies-literature | 2025 Mar

REPOSITORIES: biostudies-literature