High-Mobility, High-Photostability Tetravalent-Terbium-Doped Indium-Tin-Zinc-Oxide Thin-Film Transistors with a Stacked-Channel Structure.

ABSTRACT: The trade-off between mobility and stability is the main problem for amorphous oxide semiconductor (AOS) thin-film transistors (TFTs). In this work, a high-mobility and good-photostability Tb-doped indium-tin-zinc oxide (Tb:ITZO) AOS is studied. The ITZO TFT without Tb doping had a mobility of as high as 49.4 cm²·V^-1·s^-1 but exhibited poor stability under negative bias illumination stress (NBIS). After Tb doping, the NBIS stability of the TFTs improved greatly, but the mobility reduced to 37.9 cm²·V^-1·s^-1. The great improvement of the NBIS stability of the Tb:ITZO TFTs is attributed to the charge-transfer transition between Tb4f ⁷O2p ⁶ and Tb4f ⁸O2p ⁵ th

SUBMITTER: Su H 

PROVIDER: S-EPMC11886735 | biostudies-literature | 2025 Mar

REPOSITORIES: biostudies-literature