Electrochemical ohmic memristors for continual learning.

ABSTRACT: Developing versatile and reliable memristive devices is crucial for advancing future memory and computing architectures. The years of intensive research have still not reached and demonstrated their full horizon of capabilities, and new concepts are essential for successfully using the complete spectra of memristive functionalities for industrial applications. Here, we introduce two-terminal ohmic memristor, characterized by a different type of switching defined as filament conductivity change mechanism (FCM). The operation is based entirely on localized electrochemical redox reactions, resulting in essential advantages such as ultra-stable binary and analog switching, broad voltage stability window, high temperature stability, high switching ratio and good endurance. The multifunctional p

SUBMITTER: Chen S 

PROVIDER: S-EPMC11890563 | biostudies-literature | 2025 Mar

REPOSITORIES: biostudies-literature