Optimization of low sintering temperature for colossal permittivity and humidity resistance in TiO₂ based ceramics.

ABSTRACT: This study investigates the colossal permittivity (CP) and humidity resistance of (Sn_1/2Nb_1/2)_0.025Ti_0.975O₂ ceramics. Increasing the sintering temperature enhanced both density and grain growth, with the fine-grained structure proving essential for achieving a high dielectric constant (ε' ~ 2.2 × 10⁴) and maintaining low dissipation factors (tanδ ~ 0.011) at a reduced sintering temperature of 1150 °C. At an elevated sintering temperature of 1210 °C, optimal dielectric properties were observed, yielding ε' ~ 1.0 × 10⁴ and an ultra-low tanδ of ~ 0.004, attributed to highly resistive grain boundaries. The CP response is linked to semiconducting grains, supported by the presence of Ti³⁺ resulting from Ti

SUBMITTER: Mingmuang Y 

PROVIDER: S-EPMC11890778 | biostudies-literature | 2025 Mar

REPOSITORIES: biostudies-literature