Ultralow trap density FAPbBr<sub>3</sub> perovskite films for efficient light-emitting diodes and amplified spontaneous emission.
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ABSTRACT: Solution-processed metal halide perovskites are widely studied for their potential in high-efficiency light-emitting diodes, yet they are facing several challenges like insufficient brightness, short operational lifetimes, and reduced power conversion efficiency under practical operation conditions. Here, we develop an interfacial amidation reaction on sacrificial ZnO substrates to produce perovskite films with low trap density (1.2 × 1010 cm-3), and implement a device structure featuring a mono-molecular hole-injection layer and an all-inorganic bi-layered electron-injection layer. This design leads to green perovskite light-emitting diodes with a brightness of ~ 312,000 cd m-2, a half-lifetime of 350 h at 1000 cd m-2, and a power conversion eff
SUBMITTER: Chen D
PROVIDER: S-EPMC11894068 | biostudies-literature | 2025 Mar
REPOSITORIES: biostudies-literature
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