Self-Trapped-Exciton Radiative Recombination in β-Ga₂O₃: Impact of Two Concurrent Nonradiative Auger Processes.

ABSTRACT: The peculiarities of radiative and nonradiative processes associated with self-trapped intrinsic eXcitons in the excited β-Ga₂O₃ crystals are studied via time-resolved techniques of induced absorption, transient grating, and photoluminescence (PL) at room temperature. The excitation above the bandgap is produced by laser pulses with linear light polarization parallel and orthogonal in the (-201) and (001) planes. We elucidate that the nonradiative recombination rate occurring in the eXciton prevails over its radiative emission rate in a wide range of free carrier concentration composed of excited and equilibrium electrons. Hence, the nonradiative recombination has no effect on the strong anisotropy and the shape of the eXciton emission band. However, we find out that

SUBMITTER: Grivickas V 

PROVIDER: S-EPMC11905285 | biostudies-literature | 2025 Mar

REPOSITORIES: biostudies-literature