Metal-Modulated Growth of Cubic, Red-Emitting InGaN Layers and Self-Assembled InGaN/GaN Quantum Wells by Molecular Beam Epitaxy.

ABSTRACT: Cubic InGaN alloys are a promising candidate material for next-generation optoelectronic applications as they lack internal fields and promise to cover large parts of the electromagnetic spectrum from the deep UV toward the mid-infrared. This demands high-quality epitaxial growth of cubic InGaN/GaN quantum wells, especially for the red energy range. However, the growth of indium-bearing nitride quantum wells in the metastable cubic phase still poses many challenges. InGaN and GaN are typically grown at different temperatures and with different metal fluxes in molecular beam epitaxy, leading to either long waiting periods for temperature adjustment or growth under suboptimal conditions. Both degrade the crystal quality and optical properties. In this study, we apply a metal-modulated growth

SUBMITTER: Jentsch SA 

PROVIDER: S-EPMC11905880 | biostudies-literature | 2025 Mar

REPOSITORIES: biostudies-literature