Modelling and optimization of Ge/GaAs uni-travelling carrier photodiodes.

ABSTRACT: Uni-Travelling-Carrier Photodiodes (UTC-PDs) are pivotal for the advancement of high-speed optical communication systems. Current UTC-PDs have a trade-off between high performance and low production costs. The performance of conventional Ge/Si UTC-PDs is limited by the materials, primarily due to the relatively low electron mobility of Si compared with that of GaAs and InP. The UTC-PDs based on high-mobility materials such as InP have high production and fabrication costs, which limits their effectiveness in next-generation applications. Germanium (Ge) and Gallium Arsenide (GaAs), with their high carrier mobility and lattice-matching capabilities, are strong candidates for UTC-PDs. Their compatibility with GaAs and Si substrates allows for large-scale production and integration into silico

SUBMITTER: Zhang Y 

PROVIDER: S-EPMC11910542 | biostudies-literature | 2025 Mar

REPOSITORIES: biostudies-literature