Strong antiferromagnetic interlayer exchange coupling induced by small additions of Re to an Ir interlayer in synthetic antiferromagnetic systems.

ABSTRACT: Synthetic antiferromagnetic (AF) pinned layers are widely used in order to reduce the stray field of the pinned layer and stabilize the magnetic alignment of the reference layer in perpendicular magnetic tunnel junctions (MTJs). Here, a detailed study of Re concentration dependence of the magnitude of interlayer exchange coupling (|J_ex|) in a synthetic AF system with an Ir-Re interlayer is conducted. We observed strong AF interlayer exchange coupling caused by small amounts of Re addition and phase shift of the AF peak to thinner interlayer region in synthetic AF systems with Ir-Re interlayer. A synthetic AF system with an Ir-Re interlayer has strong AF interlayer exchange coupling and perpendicular magnetic anisotropy which are stable up to 673K annealing, which is compatible w

SUBMITTER: Saito Y 

PROVIDER: S-EPMC11910546 | biostudies-literature | 2025 Mar

REPOSITORIES: biostudies-literature