2D edge-seeded heteroepitaxy of ultrathin high-κ dielectric CaNb₂O₆ for 2D field-effect transistors.

ABSTRACT: The experimental realization of single-crystalline high-κ dielectrics beyond two-dimensional (2D) layered materials is highly desirable for nanoscale field-effect transistors (FETs). However, the scalable synthesis of 2D nonlayered high-κ insulators is currently limited by uncontrolled isotropic three-dimensional growth, hampering the achievement of simultaneous high dielectric constants and low trap densities for small film thicknesses. Herein, we show a 2D edge-seeded heteroepitaxial strategy to synthesize ultrathin nonlayered 2D CaNb₂O₆ nanosheets by chemical vapor deposition, exhibiting high-crystalline quality, thickness-independent dielectric constant (~ 16) and breakdown field strength up to ~ 12 MV cm^-1. The MoS₂/CaNb₂O_6</

SUBMITTER: Fan X 

PROVIDER: S-EPMC11911405 | biostudies-literature | 2025 Mar

REPOSITORIES: biostudies-literature