Toward Phonon-Limited Transport in Two-Dimensional Transition Metal Dichalcogenides by Oxygen-Free Fabrication.

ABSTRACT: Developing future electronics will require aggressive scaling of the channel material thickness while maintaining device performance. Two-dimensional (2D) semiconductors are promising candidates to sustain further device scaling, but despite more than two decades of intense research, experimental performance continues to lag theoretical expectations. Here, we develop an oxygen-free approach to fabricate 2D field-effect transistors and push the electrical transport toward the theoretical phonon-limited intrinsic mobility. This approach achieves record carrier mobilities of 91 and 132 cm² V^-1 s^-1 for mono- and bilayer MoS₂ transistors on silicon oxide substrates. Statistical analysis of over 60 MoS₂ and WS₂ devices confirms th

SUBMITTER: Mukherjee S 

PROVIDER: S-EPMC11912576 | biostudies-literature | 2025 Mar

REPOSITORIES: biostudies-literature