Ultrahigh dielectric permittivity in Hf_0.5Zr_0.5O₂ thin-film capacitors.

ABSTRACT: The ever-shrinking electrostatic capacitor, which is capable of storing substantial quantities of electrical charge, has found widespread applications in high-storage-density dynamic random access memory and energy-efficient complementary metal-oxide-semiconductor devices. Despite the high energy storage densities (133-152 J/cm³) and efficiencies (75-90%) that have been realized using relaxor ferroelectric thick films, low-permittivity interfacial layers in the ultrathin films have caused the overall permittivity to be one to two orders of magnitude lower than expected. However, innovative use of complementary metal-oxide-semiconductor-compatible HfO₂-based materials with high permittivities (~52) could enable integration of these capacitors into few-nanometre-scale d

SUBMITTER: Zhang WD 

PROVIDER: S-EPMC11920517 | biostudies-literature | 2025 Mar

REPOSITORIES: biostudies-literature