Point Defect Scattering and Phonon Softening for Achieving High Thermoelectric Performance in p-Type ZnSb with Optimal Carrier Concentration.

ABSTRACT: The thermoelectric material ZnSb has been intensively studied on account of its good thermodynamic stability and earth-abundant constituent elements, both of which make it feasible for mass production. However, the practical application of ZnSb is limited by its relatively poor thermoelectric performance, characterized by a low power factor and high lattice thermal conductivity. Herein, we demonstrate that there is a significant improvement in the thermoelectric figure of merit of ZnSb by combining Ge doping at the Sb site with Cd alloying at the Zn site. First, Ge doping at the Sb site can effectively optimize the carrier concentration, thereby resulting in an ∼82% increase in the peak power factor through a concentration of only 0.6%. Second, Cd alloying at the Zn site can bring about a

SUBMITTER: Shen D 

PROVIDER: S-EPMC11931488 | biostudies-literature | 2025 Mar

REPOSITORIES: biostudies-literature