Low Hysteresis Vanadium Dioxide Integrated on Silicon Using Complementary Metal-Oxide Semiconductor Compatible Oxide Buffer Layer.

ABSTRACT: VO₂ undergoes a metal-insulator transition (MIT) at ≈70 °C, which induces large variations in its electrical and wavelength-dependent optical properties. These features make VO₂ a highly sought-after compound for optical, thermal, and neuromorphic applications. To foster the development of VO₂-based devices for the microelectronic industry, it is also imperative to integrate VO₂ on silicon. However, high lattice mismatch and the formation of silicates at the interface between VO₂ and Si degrade the quality and functionality of VO₂ films. Moreover, VO₂'s polymorphic nature and stable V-O phases pose integration issues. To address these challenges, the MIT of VO₂ thin films integrated on Si with a complem

SUBMITTER: Sahoo SP 

PROVIDER: S-EPMC11934903 | biostudies-literature | 2025 Feb

REPOSITORIES: biostudies-literature