Design of Versatile Top-Down Transfer by Thermal Release Tape/Poly(methyl methacrylate) (TRT/PMMA) Bi-Supporting Layers Toward All-Transfer Transition Metal Dichalcogenide Material Based Transistor Arrays.

ABSTRACT: A top-down transfer process is developed via a rolling process associated with thermal release tape/poly(methyl methacrylate) (PMMA) bi-supporting layers to realize large-scale transfer processes on transition metal dichalcogenide materials. A 2-inch MoS₂ thin film transferred on SiO₂/Si substrates with high integrity and a yield of ≈99% can be successfully achieved via the proposed process. MoS₂-based transistors with a transferred Au thin film as the contact electrode indicate a lower contact resistance of 8.4 kΩ with improved mobility and a higher on/off ratio compared with that of the MoS₂-based transistors with the evaporated Au thin film as the contact electrode. By applying the difference in adhesion force between metal oxides and metal on

SUBMITTER: Shen YC 

PROVIDER: S-EPMC11935217 | biostudies-literature | 2024 Feb

REPOSITORIES: biostudies-literature