Polarized Raman Microscopy to Image Microstructure Changes in Silicon Phthalocyanine Thin-Films.

ABSTRACT: The choice of deposition technique and post deposition treatment can significantly influence the performance of organic electronic devices by altering the complex relationship between film properties and charge transport. Herein, the influence of deposition method and post deposition thermal annealing on the thin-film properties of an emerging semiconductor, bis(tri-n-propylsilyl oxide) SiPc ((3PS)₂-SiPc), is examined by polarized Raman microscopy. Comparing physical vapor deposition (PVD) and spin-coating, the orientation of (3PS)₂-SiPc molecules in films is determined and further characterized by X-ray diffraction to assess variations in microstructure and morphology due to thermal annealing. Despite differences in film formation, non-annealed organic thin-fi

SUBMITTER: Cranston RR 

PROVIDER: S-EPMC11935273 | biostudies-literature | 2024 Jun

REPOSITORIES: biostudies-literature