Dielectric-Free Molybdenum Disulfide Transistors with In-Plane Gates.

ABSTRACT: In this work, we realize bilayer molybdenum disulfide (MoS₂) transistors with in-plane gates on sapphire substrates. Through sequential transferring of MoS₂, e-beam lithography, and metal lift-off, a device with channel width/length of 500:400 nm is fabricated. With a 250 nm separation between the in-plane gate and MoS₂ channel, a drain current as high as 37 μA with a clear saturation region is observed. The device shows a high ON/OFF current ratio over 10⁹, small gate bias required for current modulation, and high responsivity about 230 A/W when operated in the phototransistor mode. The gain of the phototransistor reaches 432. A quick calculation from the transfer curve using the formula of conventional transistors gives a field-effect mobility

SUBMITTER: Chang CJ 

PROVIDER: S-EPMC11955947 | biostudies-literature | 2025 Mar

REPOSITORIES: biostudies-literature